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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1086A Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -160 -160 -5 -1.5 -3.0 UNIT V V V A A W ae ae Collector current (DC) Collector current -peak Total power dissipation Junction temperature Storage temperature TC=25ae 10 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1086A SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A ;IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-50|I A ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.0A ;IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1.0A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 |I A IEBO Emitter cut-off current hFE DC current gain VEB=-4V; IC=0 -1.0 |I A IC=-0.1A ; VCE=-5V fT Transition frequency COB Output capacitance HAN INC SEM GE IC=-0.1A ; VCE=-5V OND IC 56 TOR UC 270 50 30 MHz IE=0 ; VCB=-10V;f=1MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1086A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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